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DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CB64ES, 4516CB64PS
16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Description
The MC-4516CB64ES and MC-4516CB64PS are 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: PD45128841 are assembled. These modules provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction.
Features
* 16,777,216 words by 64 bits organization * Clock frequency and access time from CLK
Part number MC-4516CB64ES-A10B /CAS Latency CL = 3 CL = 2 Clock frequency (MAX.) 100 MHz 67 MHz 100 MHz 67 MHz Access time from CLK (MAX.) 7 ns 8 ns 7 ns 8 ns
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MC-4516CB64PS-A10B
CL = 3 CL = 2
* Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge * Pulsed interface * Possible to assert random column address in every cycle * Quad internal banks controlled by BA0 and BA1 (Bank Select) * Programmable burst-length (1, 2, 4, 8 and Full Page) * Programmable wrap sequence (Sequential / Interleave) * Programmable /CAS latency (2, 3) * Automatic precharge and controlled precharge * CBR (Auto) refresh and self refresh * Single +3.3 V 0.3 V power supply * LVTTL compatible * 4,096 refresh cycles/64 ms * Burst termination by Burst Stop command and Precharge command * 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm) * Unbuffered type * Serial PD
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. M13611EJ5V0DS00 (5th edition) Date Published February 2000 NS CP (K) Printed in Japan
The mark * shows major revised points.
(c)
1998
MC-4516CB64ES, 4516CB64PS
Ordering Information
Part number Clock frequency MHz (MAX.) MC-4516CB64ES-A10B 100 MHz 144-pin Small Outline DIMM Edge connector: Gold Plated 8 pieces of PD45128841G5 (Rev. E) (10.16mm (400) TSOP (II)) 8 pieces of PD45128841G5 (Rev. P) (10.16mm (400) TSOP (II)) Package Mounted devices
5 MC-4516CB64PS-A10B
(Socket type) 26.67 mm height
2
Data Sheet M13611EJ5V0DS00
MC-4516CB64ES, 4516CB64PS
Pin Configuration
144-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated)
2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60
Vss DQ 32 DQ 33 DQ 34 DQ 35 Vcc DQ 36 DQ 37 DQ 38 DQ 39 Vss DQMB4 DQMB5 Vcc A3 A4 A5 Vss DQ 40 DQ 41 DQ 42 DQ 43 Vcc DQ 44 DQ 45 DQ 46 DQ 47 Vss NC NC
Vss DQ 0 DQ 1 DQ 2 DQ 3 VCC DQ 4 DQ 5 DQ 6 DQ 7 Vss DQMB0 DQMB1 VCC A0 A1 A2 Vss DQ 8 DQ 9 DQ 10 DQ 11 VCC DQ 12 DQ 13 DQ 14 DQ 15 Vss NC NC
1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49 51 53 55 57 59
/xxx indicates active low signal.
62 64 66 68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 98 100 102 104 106 108 110 112 114 116 118 120 122 124 126 128 130 132 134 136 138 140 142 144
CLK0 CKE0 Vcc Vcc /RAS /CAS /WE NC /CS0 NC NC NC NC CLK1 Vss Vss NC NC NC NC VCC Vcc DQ 16 DQ 48 DQ 17 DQ 49 DQ 18 DQ 50 DQ 19 DQ 51 Vss Vss DQ 20 DQ 52 DQ 21 DQ 53 DQ 22 DQ 54 DQ 23 DQ 55 Vcc Vcc A6 A7 A8 BA0 (A13) Vss Vss A9 BA1 (A12) A10 A11 Vcc Vcc DQMB2 DQMB6 DQMB3 DQMB7 Vss Vss DQ 24 DQ 56 DQ 25 DQ 57 DQ 26 DQ 58 DQ 27 DQ 59 VCC Vcc DQ 28 DQ 60 DQ 29 DQ 61 DQ 30 DQ 62 DQ 31 DQ 63 Vss Vss SDA SCL VCC Vcc
61 63 65 67 69 71 73 75 77 79 81 83 85 87 89 91 93 95 97 99 101 103 105 107 109 111 113 115 117 119 121 123 125 127 129 131 133 135 137 139 141 143
A0 - A11
: Address Inputs
[Row: A0 - A11, Column: A0 - A9] BA0(A13), BA1(A12) : SDRAM Bank Select DQ0 - DQ63 CLK0, CLK1 CKE0 /CS0 /RAS /CAS /WE DQMB0 - DQMB7 SDA SCL VCC VSS NC : Data Inputs/Outputs : Clock Input : Clock Enable Input : Chip Select Input : Row Address Strobe : Column Address Strobe : Write Enable : DQ Mask Enable : Serial Data I/O for PD : Clock Input for PD : Power Supply : Ground : No Connection
Data Sheet M13611EJ5V0DS00
3
MC-4516CB64ES, 4516CB64PS
Block Diagram
/WE /CS0 DQMB0 DQMB4
DQ 7 DQ 6 DQ 5 DQ 4 DQ 3 DQ 2 DQ 1 DQ 0
DQMB1
DQ 0 DQM DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7
/CS
/WE
D0
DQ 32 DQ 33 DQ 34 DQ 35 DQ 36 DQ 37 DQ 38 DQ 39
DQMB5
DQ 0 DQM /CS DQ 1 DQ 2 DQ 3 D4 DQ 4 DQ 5 DQ 6 DQ 7
/WE
DQ 15 DQ 14 DQ 13 DQ 12 DQ 11 DQ 10 DQ 9 DQ 8
DQMB2
/CS DQ 0 DQM DQ 1 DQ 2 DQ 3 D1 DQ 4 DQ 5 DQ 6 DQ 7
/WE
DQ 40 DQ 41 DQ 42 DQ 43 DQ 44 DQ 45 DQ 46 DQ 47
DQMB6
DQ 0 DQM /CS DQ 1 DQ 2 DQ 3 D5 DQ 4 DQ 5 DQ 6 DQ 7
/WE
DQ 23 DQ 22 DQ 21 DQ 20 DQ 19 DQ 18 DQ 17 DQ 16
DQMB3
DQ 0 DQM DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7
/CS
/WE
D2
DQ 48 DQ 49 DQ 50 DQ 51 DQ 52 DQ 53 DQ 54 DQ 55
DQMB7
DQ 0 DQM /CS DQ 1 DQ 2 DQ 3 D6 DQ 4 DQ 5 DQ 6 DQ 7
/WE
DQ 31 DQ 30 DQ 29 DQ 28 DQ 27 DQ 26 DQ 25 DQ 24
DQ 0 DQM /CS DQ 1 DQ 2 DQ 3 D3 DQ 4 DQ 5 DQ 6 DQ 7
/WE
DQ 56 DQ 57 DQ 58 DQ 59 DQ 60 DQ 61 DQ 62 DQ 63
DQ 0 DQM /CS DQ 1 DQ 2 DQ 3 D7 DQ 4 DQ 5 DQ 6 DQ 7
/WE
SERIAL PD SCL A0 A1 A2 SDA
CLK0 10
CLK : D0, D4 CLK : D1, D5
CLK1 10
CLK : D2, D6 CLK : D3, D7
A0 - A11 BA0 BA1 VCC C VSS
A0 - A11: D0 - D7 A13: D0 - D7 A12: D0 - D7
/RAS /CAS CKE0
/RAS: D0 - D7 /CAS: D0 - D7 CKE: D0 - D7
D0 - D7 D0 - D7
Remark D0 - D7: PD45128841 (4M words x 8bits x 4banks)
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Data Sheet M13611EJ5V0DS00
MC-4516CB64ES, 4516CB64PS
Electrical Specifications
* All voltages are referenced to VSS (GND). * After power up, wait more than 100 s and then, execute power on sequence and CBR (Auto) refresh before proper device operation is achieved.
Absolute Maximum Ratings
Parameter Voltage on power supply pin relative to GND Voltage on input pin relative to GND Short circuit output current Power dissipation Operating ambient temperature Storage temperature Symbol VCC VT IO PD TA Tstg Condition Rating -0.5 to +4.6 -0.5 to +4.6 50 8 0 to +70 -55 to +125 Unit V V mA W C C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Supply voltage High level input voltage Low level input voltage Operating ambient temperature Symbol VCC VIH VIL TA Condition MIN. 3.0 2.0 -0.3 0 TYP. 3.3 MAX. 3.6 VCC + 0.3 + 0.8 70 Unit V V V C
Capacitance (TA = 25 C, f = 1 MHz)
Parameter Input capacitance Symbol CI1 Test condition A0 - A11, BA0(A13), BA1(A12), /RAS, /CAS, /WE CI2 CI3 CI4 CI5 Data input/output capacitance CI/O CLK0, CLK1 CKE0 /CS0 DQMB0 -DQMB7 DQ0 - DQ63 36 55 55 10 10 pF MIN. TYP. MAX. 55 Unit pF
Data Sheet M13611EJ5V0DS00
5
MC-4516CB64ES, 4516CB64PS
5 DC Characteristics (Recommended Operating Conditions unless otherwise noted)
Parameter Operating current Symbol ICC1 Burst length = 1, tRC tRC (MIN.), IO = 0 mA Precharge standby current in power down mode Precharge standby current in non power down mode ICC2NS Active standby current in power down mode Active standby current in non power down mode ICC3NS Operating current (Burst mode) CBR (Auto) refresh current ICC5 tRC tRC (MIN.) ICC4 ICC3P ICC3PS ICC3N ICC2P ICC2PS ICC2N CKE VIL (MAX.), tCK = 15 ns CKE VIL (MAX.), tCK = CKE VIH (MIN.), tCK = 15 ns, /CS VIH (MIN.), Input signals are changed one time during 30 ns. CKE VIH (MIN.), tCK = , Input signals are stable. CKE VIL (MAX.), tCK = 15 ns CKE VIL (MAX.), tCK = CKE VIH (MIN.), tCK = 15 ns, /CS VIH (MIN.), Input signals are changed one time during 30 ns. CKE VIH (MIN.), tCK = , Input signals are stable. tCK tCK (MIN.), IO = 0 mA /CAS latency = 2 /CAS latency = 3 /CAS latency = 2 /CAS latency = 3 Self refresh current Input leakage current Output leakage current High level output voltage Low level output voltage ICC6 II (L) IO (L) VOH VOL CKE 0.2 V VI = 0 to 3.6 V, All other pins not under test = 0 V DOUT is disabled, VO = 0 to 3.6 V IO = - 4.0 mA IO = + 4.0 mA -8 - 1.5 2.4 0.4 160 680 1,000 1,760 1,760 16 +8 + 1.5 mA mA 3 mA 2 64 40 32 240 mA mA Test condition /CAS latency = 2 /CAS latency = 3 MIN. MAX. 800 840 8 8 160 mA mA Unit mA Notes 1
A A
V V
Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK (MIN.). 2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK (MIN.). 3. ICC5 is measured on condition that addresses are changed only one time during tCK (MIN.).
6
Data Sheet M13611EJ5V0DS00
MC-4516CB64ES, 4516CB64PS
AC Characteristics (Recommended Operating Conditions unless otherwise noted)
5 Test Conditions
Parameter AC high level input voltage / low level input voltage Input timing measurement reference level Transition time (Input rise and fall time) Output timing measurement reference level Value 2.4 / 0.4 1.4 1 1.4 Unit V V ns V
tCK tCH CLK 2.4 V 1.4 V 0.4 V tSETUP tHOLD 2.4 V 1.4 V 0.4 V tAC tOH Output tCL
Input
Data Sheet M13611EJ5V0DS00
7
MC-4516CB64ES, 4516CB64PS
Synchronous Characteristics
Parameter Symbol MIN. Clock cycle time /CAS latency = 3 /CAS latency = 2 Access time from CLK /CAS latency = 3 /CAS latency = 2 CLK high level width CLK low level width Data-out hold time Data-out low-impedance time Data-out high-impedance time /CAS latency = 3 /CAS latency = 2 Data-in setup time Data-in hold time Address setup time Address hold time CKE setup time CKE hold time CKE setup time (Power down exit) Command (/CS0, /RAS, /CAS, /WE, DQMB0 - DQMB7) setup time Command (/CS0, /RAS, /CAS, /WE, DQMB0 - DQMB7) hold time tCK3 tCK2 tAC3 tAC2 tCH tCL tOH tLZ tHZ3 tHZ2 tDS tDH tAS tAH tCKS tCKH tCKSP tCMS tCMH 3.5 3.5 3 0 3 3 2.5 1 2.5 1 2.5 1 2.5 2.5 1 7 8 10 15 7 8 -A10B MAX. ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 1 1 1 Unit Note
5 Note 1.
Output load
Z = 50 Output 50 pF
Remark
These specifications are applied to the monolithic device.
8
Data Sheet M13611EJ5V0DS00
MC-4516CB64ES, 4516CB64PS
Asynchronous Characteristics
Parameter Symbol MIN. REF to REF/ACT command period (Operation) REF to REF/ACT command period (Refresh) ACT to PRE command period PRE to ACT command period Delay time ACT to READ/WRITE command ACT (0) to ACT (1) command period Data-in to PRE command period Data-in to ACT (REF) command period (Auto precharge) Mode register set cycle time Transition time Refresh time (4,096 refresh cycles) /CAS latency = 3 /CAS latency = 2 tRC tRC1 tRAS tRP tRCD tRRD tDPL tDAL3 tDAL2 tRSC tT tREF 90 90 60 30 30 20 10 1CLK+30 1CLK+30 2 1 30 64 120,000 -A10B MAX. ns ns ns ns ns ns ns ns ns CLK ns ms Unit Note
Data Sheet M13611EJ5V0DS00
9
MC-4516CB64ES, 4516CB64PS
Serial PD
Byte No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25-26 27 28 29 30 tRP (MIN.) tRRD (MIN.) tRCD (MIN.) tRAS (MIN.) Function Described Defines the number of bytes written into serial PD memory Total number of bytes of serial PD memory Fundamental memory type Number of rows Number of columns Number of banks Data width Data width (continued) Voltage interface CL = 3 Cycle time CL = 3 Access time DIMM configuration type Refresh rate/type SDRAM width Error checking SDRAM width Minimum clock delay Burst length supported Number of banks on each SDRAM /CAS latency supported /CS latency supported /WE latency supported SDRAM module attributes SDRAM device attributes : General CL = 2 Cycle time CL = 2 Access time 04H 0CH 0AH 01H 40H 00H 01H A0H 70H 00H 80H 08H 00H 01H 8FH 04H 06H 01H 01H 00H 0EH F0H 80H 00H 1EH 14H 1EH 3CH 0 0 0 0 0 0 0 1 0 0 1 0 0 0 1 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 0 0 1 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 1 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 1 1 1 1 0 1 1 0 0 0 0 0 0 0 0 1 0 0 1 0 0 0 0 0 1 0 0 0 1 0 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 0 0 0 1 0 0 0 1 1 1 1 0 0 1 0 0 0 0 0 0 0 0 0 0 0 1 0 1 0 0 0 1 0 0 0 1 0 1 0 0 0 0 1 0 0 1 0 0 0 0 0 0 1 1 0 0 1 1 0 0 0 0 0 0 0 0 0 30 ns 20 ns 30 ns 60 ns 15 ns 8 ns SDRAM 12 rows 10 columns 1 bank 64 bits 0 LVTTL 10 ns 7 ns Non-parity Normal x8 None 1 clock 1, 2, 4, 8, F 4 banks 2, 3 0 0 08H 0 0 0 0 1 0 0 0 256 bytes Hex 80H Bit 7 1 Bit 6 0 Bit 5 0 Bit 4 0 Bit 3 0 Bit 2 0 Bit 1 0 Bit 0 0
(1/2)
Notes 128 bytes
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Data Sheet M13611EJ5V0DS00
MC-4516CB64ES, 4516CB64PS
(2/2)
Byte No. 31 32 33 34 35 36-61 62 63 64-71 72 73-90 91-92 93-94 95-98 SPD revision Checksum for bytes 0 - 62 Manufacture's JEDEC ID code Manufacturing location Manufacture's P/N Revision code Manufacturing date Assembly serial number Function Described Module bank density Command and address setup time Command and address hold time Data signal input setup time Data signal input hold time Hex 20H 25H 10H 25H 10H 00H 12H BEH Bit 7 0 0 0 0 0 0 0 1 Bit 6 0 0 0 0 0 0 0 0 Bit 5 1 1 0 1 0 0 0 1 Bit 4 0 0 1 0 1 0 1 1 Bit 3 0 0 0 0 0 0 0 1 Bit 2 0 1 0 1 0 0 0 1 Bit 1 0 0 0 0 0 0 1 1 Bit 0 0 1 0 1 0 0 0 0 1.2 A Notes 128 M bytes 2.5 ns 1 ns 2.5 ns 1 ns
99-125 Mfg specific 126 127 Intel specification frequency Intel specification /CAS latency support 66H C7H 0 1 1 1 1 0 0 0 0 0 1 1 1 1 0 1 66 MHz
Timing Chart
Refer to the SYNCHRONOUS DRAM MODULE TIMING CHART Information (M13348E).
Data Sheet M13611EJ5V0DS00
11
MC-4516CB64ES, 4516CB64PS
Package Drawing
144-PIN DUAL IN-LINE MODULE (SOCKET TYPE)
A (AREA B) M1 (AREA B) R Y N Q M L
M2 (AREA A)
H C I B
A
S
(OPTIONAL HOLES)
U1 T
U2
E D A1 (AREA A)
F
ITEM A A1 B C
MILLIMETERS 67.6 67.60.15 23.2 29.0 4.6 1.50.10 4.0 32.8 3.7 0.8 (T.P.) 3.3 20.0 26.670.15 4.67 22.0 3.8 MAX. R2.0 4.00.10 1.8 1.00.1 3.2 MIN. 4.0 MIN. 0.25 MAX. 0.60.05 2.55 MIN. 2.0 MIN. M144S-80A12-1
detail of A part W D2
D D1 D2 E F H I L
D1 V
X
M M1 M2 N Q R S T U1 U2 V W X Y
12
Data Sheet M13611EJ5V0DS00
MC-4516CB64ES, 4516CB64PS
[MEMO]
Data Sheet M13611EJ5V0DS00
13
MC-4516CB64ES, 4516CB64PS
[MEMO]
14
Data Sheet M13611EJ5V0DS00
MC-4516CB64ES, 4516CB64PS
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function.
Data Sheet M13611EJ5V0DS00
15
MC-4516CB64ES, 4516CB64PS
CAUTION FOR HANDLING MEMORY MODULES
When handling or inserting memory modules, be sure not to touch any components on the modules, such as the memory IC, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these components to prevent damaging them. When re-packing memory modules, be sure the modules are NOT touching each other. Modules in contact with other modules may cause excessive mechanical stress, which may damage the modules.
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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